IEEE AP-S/URSI 2023 || Portland, Oregon, USA || 23-28 July 2023

Institute of Electrical and Electronics Engineers (IEEE)

International Union of Radio Science

IEEE APS

U.S. NATIONAL COMMITTEE FOR URSI

National Academies Sciences Engineering Medicine

IEEE International Symposium on Antennas and Propagation and USNC-URSI Radio Science Meeting

July 23–28, 2023 • Portland, Oregon, USA

23-28 July 2023 • Portland, Oregon, USA

IEEE AP-S/URSI 2023

23-28 July 2023 • Portland, Oregon, USA

TH-UD.1P.4

Schottky Diode Based High ηRF−DC Rectifier Design in 180nm CMOS Process for Far-Field Wireless Power Transfer Applications

Rafsan Mahin, Ifana Mahbub, The University of Texas at Dallas, United States

Session:

Wireless Power Transfer and Wearable Electronics

Track:

D: URSI-D Electronics and Photonics

Location:

C 124 (OCC)

Session Time:

Thu, 27 Jul, 15:20 - 17:00 PDT (UTC -7)

Presentation Time:

Thu, 27 Jul, 16:20 - 16:40 PDT (UTC -7)

Session Co-Chairs:

Erdem Topsakal, Virginia Commonwealth University and Dipankar Mitra, University of Wisconsin-La Crosse

Session TH-UD.1P

TH-UD.1P.1: Reliability Studies of Fully Integrated CMOS Power Amplifier on Thinned Substrate for Flexible Electronics

Dipankar Mitra, University of Wisconsin-La Crosse, United States; Seyyed Babak Hamidi, University of Washington-Tacoma, United States; Palash Roy, Hanwha Phasor Ltd., Cambridge, England, United Kingdom, United Kingdom; Debasis Dawn, University of Washington-Tacoma, United States

TH-UD.1P.2: Investigation of Enhanced Metamaterial Wireless Power Transfer Using Parity-Time Symmetry

Ngoc Hung Phi, Jong-Wook Lee, Kyung Hee University, Korea (South)

TH-UD.1P.3: Dual-Band FSS for WMTS and CBRS for Wearable Wireless Medical Telemetry

Amber Nunnally, Erdem Topsakal, Virginia Commonwealth University, United States

TH-UD.1P.4: Schottky Diode Based High ηRF−DC Rectifier Design in 180nm CMOS Process for Far-Field Wireless Power Transfer Applications

Rafsan Mahin, Ifana Mahbub, The University of Texas at Dallas, United States